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Silicon carbide protective tube: A revolutionary material for high-temperature protection in the electronics industry

2025-07-31

Core Technical Advantages of Silicon Carbide Protective Tubes

1,Ultimate high-temperature stability

Silicon carbide protective tubes can still maintain structural stability at a high temperature of 1600°C, with a thermal conductivity as high as 120-200 W/m · K, which is more than five times that of stainless steel. This feature enables it to conduct heat quickly and prevent local overheating in scenarios such as high-temperature furnaces and semiconductor wafer processing. For instance, the MOSFET module developed by stmicroelectronics with its fourth-generation SiC technology can maintain an on-resistance as low as 24mΩ even in A high-temperature environment of 175°C, and the high-temperature leakage current is controlled within 50μA, significantly enhancing the reliability of the equipment in extreme conditions.

2,Chemical inertness and corrosion resistance

Silicon carbide has extremely strong resistance to strong acids (except hydrofluoric acid), strong alkalis and molten metals. In the case of a certain polysilicon enterprise in Xinjiang, the silicon carbide ceramic pipe, which does not contain metal elements, effectively avoids metal contamination during the transportation of silicon powder. Meanwhile, its Mohs hardness of 9.2 extends its wear-resistant life by more than three times compared to traditional metal pipes. This chemical stability is particularly crucial in scenarios such as the transportation of high-purity gases in semiconductor manufacturing and the lining of chemical reactors

3.Mechanical strength and thermal shock resistance

The bending strength of silicon carbide protective tubes can reach 400-600 MPa, and the compressive strength exceeds 2000 MPa. Moreover, they can withstand rapid heating and cooling cycles from room temperature to 1000°C without cracking. The SiC protective tube developed by Saint-Gobain reduces thermal resistance TO 0.2K/W through silver sintering technology, increases thermal conductivity by 50%, and adopts TO-247-4 Kelvin packaging to reduce parasitic inductance, making it suitable for high-frequency oscillation environments. This combination of high strength and thermal shock resistance enables it to perform exceptionally well in dynamic load scenarios such as automotive electronic sensors and energy storage converters.

4.Precise adaptation and long service life features

The dimensional accuracy of silicon carbide protective tubes can be controlled at the micrometer level, and the surface finish is below Ra 0.1μm, meeting the high-precision assembly requirements of semiconductor equipment. For instance, the B3M series SiC MOSFET modules provided by Qingjia Electronics have reduced the active region specific on-resistance to 2.5mΩ · cm² through the third-generation chip technology and support a split-free parallel design, significantly lowering the system maintenance cost. In photovoltaic inverters, the application of silicon carbide protection tubes reduces temperature rise by 15°C and extends the system's lifespan by more than 20%.

Typical application cases in the electronics industry

1. Semiconductor manufacturing: The Guardian of high-temperature processes

In the high-temperature activation furnace for semiconductor wafers (above 1600°C), silicon carbide protective tubes, as thermocouple sleeves, need to withstand the erosion of molten metal and high-frequency thermal shock. A leading wafer fab adopts the pressure-free sintered silicon carbide sheath tube of Haihe Precision Ceramics. Its thermal conductivity remains at 35 W/m · K at 1200°C, which is 120% higher than that of traditional alumina sheath tubes. Meanwhile, through surface CVD coating technology, the leakage rate is controlled within 1%, ensuring the temperature measurement accuracy and equipment stability.

2,New energy vehicles: Protective barriers for power devices

The 1200V/3.0mΩ half-bridge module developed by stmicroelectronics with its fourth-generation SiC technology, featuring an innovative edge terminal design, has achieved a 15% improvement in the factor of quality (FOM) in automotive traction inverters. Its TOLL packaging technology reduces stray inductance by 30%, enabling the switching frequency to exceed 100kHz, effectively reducing the volume of magnetic components and the complexity of the heat dissipation system. After a certain new energy vehicle manufacturer adopted this module, the volume of the on-board charger was reduced by 30%, and the charging efficiency was increased to over 99%.

3,Photovoltaic energy storage: A key support for the energy efficiency revolution

In hybrid inverters and energy storage converters, the application of silicon carbide protection tubes is breaking through the performance bottlenecks of traditional silicon-based IGBTs. The BMF240R12E2G3 module provided by Qingjia Electronics eliminates reverse recovery losses by integrating SiC SBD and, in combination with a Si₃N₄ AMB ceramic substrate, increases the power density of the energy storage converter to 4kW/L, with the system efficiency exceeding 99%. In a certain photovoltaic power station in Xinjiang, this plan reduced the copper material usage by 40% and lowered the overall cost by 18%

4. Industrial equipment: A reliable barrier in extreme

Environments

In coal chemical gasifiers, silicon carbide protective tubes need to withstand the erosion of syngas at a high temperature of 1400°C and high pressure. The recrystallized sintered silicon carbide pipes developed by Jingcheng Special Ceramics enhance thermal shock resistance by introducing fine flake graphite. After being immersed in molten zinc at 480°C for two weeks, there is no obvious erosion, and the maintenance cycle is extended from the three months of traditional metal pipes to two years. This long-life feature also stands out in corrosive environments such as waste incinerators and biomass boilers.

With the development of electronic devices towards higher power density and lower energy consumption, the application of silicon carbide protection tubes is penetrating from high-temperature fields to all scenarios. For instance, the third-generation SiC MOSFET technology has achieved a 30% reduction in chip area and lowered costs through mass production of 200mm wafers. In the future, silicon carbide protective tubes will continue to make breakthroughs

Silicon carbide protective tubes, with their unique advantages of high temperature resistance, corrosion resistance and high thermal conductivity, are triggering a material revolution in various fields of the electronics industry. From semiconductor wafer manufacturing to power modules for new energy vehicles, from photovoltaic energy storage systems to industrial high-temperature equipment, silicon carbide protective tubes are not only the "protective suits" for components, but also the "accelerators" for energy efficiency improvement. With technological iteration and cost reduction, silicon carbide protective tubes will become the core cornerstone for the electronics industry to achieve high-temperature, high-efficiency and high-reliability, injecting new impetus into the global energy transition and industrial upgrading.